图尔克用于焊接传感器，BI8U-M18-AP6X
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M18 x 1圆柱螺纹
铜镀铬
全金属检测衰减系数恒为1
防护等级IP68
抗磁场干扰
超大开关距离
可嵌入式安装
3线直流, 10…30 VDC
常开，pnp输出
电缆连接
图尔克用于焊接传感器，BI8U-M18-AP6X
TURCK sensors is the use of the photovoltaic element as a sensor of the detection element. It first changes to be measured converted into the change of the optical signal, and then with the photovoltaic element further optical signal is converted into an electrical signal. The photoelectric sensor is generally composed of three parts of a light source, an optical path and a photovoltaic element. Different from the principle of luminous flux Optoelectronics made of optical measurement and control system are many and varied, the the Optoelectronics (optical measurement and control system) the nature of the output can be divided into two categories, photoelectric analog photoelectric sensors and pulse (switch) sensor. analog type photoelectric sensor is to be measured into a continuous variation of the light current conversion photoelectric sensor, it is to be single-valued relationship between measurements was analog type photoelectric sensor be measured (detected target object) method can be divided into a transmission (absorption) the so-called transmission type, diffuse reflectance, shading (beam blocking) three categories. refers to the measured object is placed in the optical path, constant light source emits light energy through the measured object, most absorbed and transmitted light projected onto the diffuse constant light source emits the light projected onto the measured object, and then projected onto the photovoltaic element from the surface reflection of the measured object; called shielding style refers When the light flux emitted by the photovoltaic element; EUT light shielding the one part, so that the projection cut the throat of the photovoltaic element of the flux change, the degree of change and the measured object in the position of the optical path of the photodiode is the most common optical sensor. Appearance and general diode photodiode as just opening a window was covered with glass in its shell and tube, so that the light strikes the light area to increase the area of the PN junction made larger photodiode working in the anti- to bias the working state, and with the load resistor in series, when no light, it is the same as the ordinary diode, a reverse current is very small (<μA), referred to as the dark current of the photodiode; when there is light The carrier is excited to generate an electron - hole, called a photoelectric photoelectric sensor carrier. The outer under the effect of electric field, the optical carrier reference to the conductive forming is much greater than the dark current of the reverse current, the reverse current is called photocurrent. The photocurrent is proportional to the light intensity, so the load resistance can be obtained an electric signal which varies with the light intensity changes. Phototransistor is converted into an electric signal, in addition to having a photosensitive diode capable optical signal amplification functions of the electrical signal. The photosensitive appearance and general triode triode less general phototransistor only leads to the two poles - the emitter and collector, base leads the same windowing shell and tube, so that the light strikes the Is increase of light, the base area is made very large, the emitting region is small, the incident light is mainly absorbed by the base region. Work collector junction reverse biased emitter junction is forward-biased. The current flow through the tube in the absence of light dark current Iceo = (1 + β) Icbo (small) than general transistor penetration current is also small; inspire a large number of electron - hole pairs when illuminated, making current Ib increases the base generated at the moment flowing through the current of the tube is called photocurrent, the collector current Ic = (1 + β), Ib, has a higher sensitivity than the photodiode visible phototransistor.
图尔克用于焊接传感器，BI8U-M18-AP6X
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